1. product profile 1.1 general description hybrid amplifier module in a sot115ae package, operating at a supply voltage of 24 v direct current (dc), employing heterojunction field effect transistor (hfet) gaas dies. 1.2 features and benefits ? low power consumption ? excellent linearity ? extremely low noise ? excellent return loss properties ? gain compensation over temperature ? rugged construction ? unconditionally stable ? thermally optimized design ? adjustable supply current ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? catv systems operating in the 40 mhz to 1 ghz frequency range. 1.4 quick reference data [1] 77 ntsc; [f = 54 mhz to 550 mhz]; flat v o till 550 mhz. [2] pin 4 not connected. [3] direct current (dc). CGD1042L 1 ghz, 23 db gain gaas low current power doubler rev. 1 ? 10 march 2014 product data sheet table 1. quick reference data bandwidth 40 mhz to 1006 mhz; v b = 24 v (dc); z s = z l = 75 ? ; t mb =35 ? c; unless otherwise specified. symbol parameter conditions min typ max unit g p power gain f = 50 mhz 20.5 21.5 22.5 db f = 1006 mhz 22 23 24 db ctb composite triple beat v o = 51 dbmv at 550 mhz [1] [2] - ? 61 ? 56 dbc cso composite second-order distortion v o = 51 dbmv at 550 mhz [1] [2] - ? 68 ? 64 dbc i tot total current pin 4 not connected [3] 355 375 395 ma pin 4 connected to ground [3] -330-ma
CGD1042L all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights re served. product data sheet rev. 1 ? 10 march 2014 2 of 9 nxp semiconductors CGD1042L 1 ghz, 23 db gain gaas low current power doubler 2. pinning information [1] the total supply current can be adjusted by pin 4. gr ounding of pin 4 gives the lowest supply current while floating of pin 4 gives t he maximum supply current. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol 1 input 2, 3 common 4i cc adjust [1] 5+ v b 7, 8 common 9output d d d table 3. ordering information type number package name description version CGD1042L - rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 ? 6-32 unc and 2 extra horizontal mounting holes; 8 gold-plated in-line leads sot115ae table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v b supply voltage - 30 v v i(rf) rf input voltage single tone - 75 dbmv i i input current on i cc adjust (pin 4) ? 10 0 ma t stg storage temperature ? 40 +100 ? c t mb mounting base temperature ? 20 +100 ? c
CGD1042L all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights re served. product data sheet rev. 1 ? 10 march 2014 3 of 9 nxp semiconductors CGD1042L 1 ghz, 23 db gain gaas low current power doubler 5. characteristics table 5. characteristics bandwidth 40 mhz to 1006 mhz; v b = 24 v (dc); z s = z l = 75 ? ; t mb =35 ? c; unless otherwise specified. symbol parameter conditions min typ max unit g p power gain f = 50 mhz 20.5 21.5 22.5 db f = 1006 mhz 22 23 24 db sl sl slope straight line f = 40 mhz to 1006 mhz [1] 0.5 - 2 db fl flatness of frequency response f = 40 mhz to 1006 mhz [2] -- 0.8db rl in input return loss f = 40 mhz to 160 mhz 20 - - db f = 160 mhz to 320 mhz 20 - - db f = 320 mhz to 640 mhz 18 - - db f = 640 mhz to 870 mhz 16 - - db f = 870 mhz to 1006 mhz 14 - - db rl out output return loss f = 40 mhz to 160 mhz 20 - - db f = 160 mhz to 320 mhz 20 - - db f = 320 mhz to 640 mhz 19 - - db f = 640 mhz to 870 mhz 17 - - db f = 870 mhz to 1006 mhz 16 - - db nf noise figure f = 50 mhz - 5.2 6.0 db f = 1006 mhz - 5.7 6.5 db pin 4 not connected i tot total current [3] 355 375 395 ma 77 ntsc channels ctb composite triple beat v o = 51 dbmv at 550 mhz [4] - ? 61 ? 56 dbc cso composite second-order distortion v o = 51 dbmv at 550 mhz [4] - ? 68 ? 64 dbc v o = 51 dbmv at 550 mhz [4] [8] - ? 71 ? 67 dbc xmod cross modulation v o = 51 dbmv at 550 mhz [4] [5] - ? 60 - db 79 ntsc channels + 75 digital channels ctb composite triple beat v o = 54 dbmv at 1006 mhz [6] - ? 75 - dbc cso composite second-order distortion v o = 54 dbmv at 1006 mhz [6] - ? 77 - dbc xmod cross modulation v o = 54 dbmv at 1006 mhz [5] [6] - ? 68 - db ccn carrier-to-composite noise v o = 54 dbmv at 1006 mhz [6] -62-dbc 74 ntsc channels + 36 digital channels ctb composite triple beat v o = 51 dbmv at 770 mhz [7] - ? 65 - dbc cso composite second-order distortion v o = 51 dbmv at 770 mhz [7] - ? 73 - dbc xmod cross modulation v o = 51 dbmv at 770 mhz [5] [7] - ? 54 - db
CGD1042L all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights re served. product data sheet rev. 1 ? 10 march 2014 4 of 9 nxp semiconductors CGD1042L 1 ghz, 23 db gain gaas low current power doubler [1] g p at 1003 mhz minus g p at 40 mhz. [2] flatness is defined as peak deviation to straight line. [3] direct current (dc). [4] 77 ntsc; [f = 54 mhz to 550 mhz]; flat v o till 550 mhz. [5] measured at 55.25 mhz. [6] 79 ntsc channels [f = 54 mhz to 550 mhz] + 75 digital channels [f = 550 mhz to 1006 mhz] ( ? 6 db offset); tilt extrapolated to 13.5 db at 1006 mhz. [7] 74 ntsc channels [f = 70 mhz to 550 mhz] + 36 digital channels [f = 550 mhz to 770 mhz] ( ? 10 db offset); tilt = 0 db. [8] measured at 78 mhz. pin 4 connected to ground i tot total current [3] -330-ma 77 ntsc channels ctb composite triple beat v o = 51 dbmv at 550 mhz [4] - ? 53 - dbc cso composite second-order distortion v o = 51 dbmv at 550 mhz [4] - ? 68 - dbc 79 ntsc channels + 75 digital channels ctb composite triple beat v o = 54 dbmv at 1006 mhz [6] - ? 66 - dbc cso composite second-order distortion v o = 54 dbmv at 1006 mhz [6] - ? 77 - dbc ccn carrier-to-composite noise v o = 54 dbmv at 1006 mhz [6] -59-dbc 74 ntsc channels + 36 digital channels ctb composite triple beat v o = 51 dbmv at 770 mhz [7] - ? 59 - dbc cso composite second-order distortion v o = 51 dbmv at 770 mhz [7] - ? 73 - dbc table 5. characteristics ?continued bandwidth 40 mhz to 1006 mhz; v b = 24 v (dc); z s = z l = 75 ? ; t mb =35 ? c; unless otherwise specified. symbol parameter conditions min typ max unit
CGD1042L all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights re served. product data sheet rev. 1 ? 10 march 2014 5 of 9 nxp semiconductors CGD1042L 1 ghz, 23 db gain gaas low current power doubler 6. package outline fig 1. package outline sot115ae 5 ( ) ( 5 ( 1 & |